A high-voltage interrupted-field time-of-flight transient photoconductivity apparatusPOLISCHUK, B; KASAP, S. O.Measurement science & technology (Print). 1991, Vol 2, Num 1, pp 75-80, issn 0957-0233Article

Measurement of mobility-lifetime products in amorphous semiconductorsPOLISCHUK, B; KASAP, S. O; VISWANTH AIYAH et al.Canadian journal of physics (Print). 1991, Vol 69, Num 3-4, pp 361-369, issn 0008-4204, 9 p.Conference Paper

An interrupted field time-of-flight (IFTOF) technique in transient photoconductivity measurementsKASAP, S. O; POLISCHUK, B; DODDS, D et al.Review of scientific instruments. 1990, Vol 61, Num 8, pp 2080-2087, issn 0034-6748, 8 p.Article

Study of photogenerated charge carrier dispersion in chlorinated a-Se:0.3%As by the interrupted field time-of-flight techniquePOLISCHUK, B; KASAP, S. O; BAILLIE, A et al.Applied physics letters. 1993, Vol 63, Num 2, pp 183-185, issn 0003-6951Article

Field dependence of the hole transit-time dispersion in As-Cl stabilized amorphous selenium X-ray photoconductorsKASAP, S. O; HAUGEN, C; POLISCHUK, B et al.The Journal of imaging science and technology. 2001, Vol 45, Num 1, pp 30-36, issn 1062-3701Article

Metallic electrical contacts to stabilized amorphous selenium for use in X-ray image detectorsJOHANSON, R. E; KASAP, S. O; ROWLANDS, J et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 1359-1362, issn 0022-3093, bConference Paper

Selenium direct converter structure for static and dynamic x-ray detection in medical imaging applicationsPOLISCHUK, B; SHUKRI, Z; LEGROS, A et al.SPIE proceedings series. 1998, pp 494-504, isbn 0-8194-2781-0Conference Paper

Electrophotographic and charge transport measurements on amorphous semiconductor films of (Se_1-xTe_x)_1-yP_yKASAP, S. O; POLISCHUK, B; VISWANATH AIYAH et al.Canadian journal of physics (Print). 1992, Vol 70, Num 10-11, pp 1118-1123, issn 0008-4204Conference Paper

Determination of the deep-hole capture cross-section in a-Se via xerographic and interrupted-field time-of-flight techniquesKASAP, S. O; VISWANATH AIYAH; POLISCHUK, B et al.Philosophical magazine letters. 1990, Vol 62, Num 5, pp 377-382, issn 0950-0839, 6 p.Article

The interrupted field time-of-flight transient photoconductivity technique for studying charge transport and trapping inhigh resistivity semiconductorsPOLISCHUK, B; KASAP, S. O; AIYAH, V et al.International journal of electronics. 1994, Vol 76, Num 6, pp 1029-1041, issn 0020-7217Conference Paper

Deep-trapping kinematics of charge carriers in amorphous semiconductors : a theoretical and experimental studyKASAP, S. O; VISWANATH AIYAH; POLISCHUK, B et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 8, pp 6691-6705, issn 0163-1829, 15 p.Article

Drift mobility relaxation in a-SeKASAP, S. O; POLISCHUK, B; VISWANATH AIYAH et al.Journal of applied physics. 1990, Vol 67, Num 4, pp 1918-1922, issn 0021-8979, 5 p.Article